? 2007 ixys corporation all rights reserved symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a55v v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v i gss v gs = 20 v, v ds = 0 v 200 na i dss v ds = v dss 5 a v gs = 0 v t j = 150c 250 a r ds(on) v gs = 10 v, i d = 50 a, notes 1, 2 4.0 m trenchmv tm power mosfet (electrically isolated back surface) n-channel enhancement mode avalanche rated IXTF280N055T v dss =55 v i d25 = 160 a r ds(on) 4.0 m ds99686 (01/07) symbol test conditions maximum ratings v dss t j = 25c to 175c 55 v v dgr t j = 25c to 175c; r gs = 1 m 55 v v gsm transient 20 v i d25 t c = 25c 160 a i l package current limit, rms (75 a per lead) 150 a i dm t c = 25c, pulse width limited by t jm 600 a i ar t c = 25c 40 a e as t c = 25c 1.5 j dv/dt i s i dm , di/dt 100 a/ms, v dd v dss 3 v/ns t j 175c, r g = 3.3 p d t c = 25c 200 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 seconds 260 c v isol 50/60 hz, t = 1 minute, i isol < 1 ma, rms 2500 v f c mounting force 20..120/4.5..25 n/lb. weight 6g g = gate d = drain s = source isoplus i4-pak tm (5-lead) (ixtf) g d s s d features ultra-low on resistance unclamped inductive switching (uis) rated low package inductance - easy to drive and to protect 175 c operating temperature advantages easy to mount space savings high power density applications automotive - motor drives - high side switch - 12v battery - abs systems dc/dc converters and off-line ups primary- side switch high current switching applications advance technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXTF280N055T notes: 1. pulse test: t 300 s, duty cycled 2 %; 2. drain and source kelvin contacts must be located less than 5 mm from the plastic body. symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 60 a, note 1 70 110 s c iss 9800 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1450 pf c rss 320 pf t d(on) 32 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 50 a 55 n s t d(off) r g = 3.3 (external) 49 n s t f 37 ns q g(on) 200 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 25 a 50 nc q gd 50 nc r thjc 0.75 c/w r thch 0.15 c/w source-drain diode characteristic values t j = 25c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 150 a i sm pulse width limited by t jm 600 a v sd i f = 50 a, v gs = 0 v, note 1 1.0 v t rr i f = 25 a, -di/dt = 100 a/ s40ns v r = 25 v, v gs = 0 v isoplus i4-pak tm (5-lead) (ixtf) outline ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2 7,071,537 leads: 1. gate; 2, 3. source; 4, 5. drain 6. isolated. all leads and tab are tin plated. advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
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